TK040N65Z,S1F
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Invent, Innovate, Integrate
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| Part Number | TK040N65Z,S1F |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | PB-F POWER MOSFET TRANSISTOR TO- |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Other Names | TK040N65Z,S1F(S TK040N65ZS1F |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 2.85mA |
| Package Case | TO-247-3 |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 40 mOhm @ 28.5A, 10V |
| Gate Charge Qg Max Vgs | 105nC @ 10V |
| Detailed Description | N-Channel 650V 57A (Ta) 360W (Tc) Through Hole TO-247 |
| Power Dissipation Max | 360W (Tc) |
| Operating Temperature | 150°C |
| Supplier Device Package | TO-247 |
| Drainto Source Voltage Vdss | 650V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 6250pF @ 300V |
| Current Continuous Drain Id25 C | 57A (Ta) |
| Moisture Sensitivity Level M S L | Not Applicable |
| Drive Voltage Max Rds On Min Rds On | 10V |