TJ60S06M3L(T6L1,NQ
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| Part Number | TJ60S06M3L(T6L1,NQ |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET P-CH 60V 60A DPAK-3 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSVI |
| Vgs Max | +10V, -20V |
| F E T Type | P-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | TJ60S06M3L(T6L1NQ TJ60S06M3LT6L1NQ |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 3V @ 1mA |
| Package Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 11.2 mOhm @ 30A, 10V |
| Gate Charge Qg Max Vgs | 156nC @ 10V |
| Detailed Description | P-Channel 60V 60A (Ta) 100W (Tc) Surface Mount DPAK+ |
| Power Dissipation Max | 100W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Supplier Device Package | DPAK+ |
| Drainto Source Voltage Vdss | 60V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 7760pF @ 10V |
| Current Continuous Drain Id25 C | 60A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 6V, 10V |