SSM6K211FE,LF
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Invent, Innovate, Integrate
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| Part Number | SSM6K211FE,LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 20V 3.2A ES6 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSIII |
| Vgs Max | ±10V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | SSM6K211FE(TE85L,F SSM6K211FE(TE85LFTR SSM6K211FE(TE85LFTR-ND SSM6K211FE,LF(CA SSM6K211FELFTR SSM6K211FETE85LF |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1V @ 1mA |
| Package Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 47 mOhm @ 2A, 4.5V |
| Gate Charge Qg Max Vgs | 10.8nC @ 4.5V |
| Detailed Description | N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6 |
| Power Dissipation Max | 500mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | ES6 |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 510pF @ 10V |
| Current Continuous Drain Id25 C | 3.2A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 1.5V, 4.5V |