SSM6J503NU,LF(T
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SSM6J503NU,LF(T |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET P CH 20V 6A 2-2AA1A |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSVI |
| Vgs Max | ±8V |
| F E T Type | P-Channel |
| Packaging | Original-Reel® |
| Other Names | SSM6J503NULF(TDKR SSM6J503NULFDKR SSM6J503NULFDKR-ND |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1V @ 1mA |
| Package Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 32.4 mOhm @ 3A, 4.5V |
| Gate Charge Qg Max Vgs | 12.8nC @ 10V |
| Detailed Description | P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount 6-UDFNB (2x2) |
| Power Dissipation Max | 1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | 6-UDFNB (2x2) |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 840pF @ 10V |
| Current Continuous Drain Id25 C | 6A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 1.5V, 4.5V |