SSM6J216FE,LF
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SSM6J216FE,LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET P-CHANNEL 12V 4.8A ES6 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSVI |
| Vgs Max | ±8V |
| F E T Type | P-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | SSM6J216FE,LF(A SSM6J216FELF SSM6J216FELF(A SSM6J216FELF-ND SSM6J216FELFTR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1V @ 1mA |
| Package Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 32 mOhm @ 3.5A, 4.5V |
| Gate Charge Qg Max Vgs | 12.7nC @ 4.5V |
| Detailed Description | P-Channel 12V 4.8A (Ta) 700mW (Ta) Surface Mount ES6 |
| Power Dissipation Max | 700mW (Ta) |
| Operating Temperature | 150°C |
| Supplier Device Package | ES6 |
| Drainto Source Voltage Vdss | 12V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1040pF @ 12V |
| Current Continuous Drain Id25 C | 4.8A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 1.5V, 4.5V |