SQV120N10-3M8_GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SQV120N10-3M8_GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 100V 120A TO262-3 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 3.5V @ 250µA |
| Package Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 3.8 mOhm @ 20A, 10V |
| Gate Charge Qg Max Vgs | 190nC @ 10V |
| Detailed Description | N-Channel 100V 120A (Tc) 250W (Tc) Through Hole TO-262-3 |
| Power Dissipation Max | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | TO-262-3 |
| Drainto Source Voltage Vdss | 100V |
| Input Capacitance Ciss Max Vds | 7230pF @ 25V |
| Current Continuous Drain Id25 C | 120A (Tc) |
| Drive Voltage Max Rds On Min Rds On | 10V |