SQM100N10-10_GE3
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SQM100N10-10_GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 100V 100A TO-263 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | SQM100N10-10-GE3 SQM100N10-10-GE3-ND SQM100N10-10_GE3-ND SQM100N10-10_GE3TR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2.5V @ 250µA |
| Package Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 10.5 mOhm @ 30A, 10V |
| Gate Charge Qg Max Vgs | 185nC @ 10V |
| Detailed Description | N-Channel 100V 100A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak) |
| Power Dissipation Max | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | TO-263 (D2Pak) |
| Drainto Source Voltage Vdss | 100V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 8050pF @ 25V |
| Current Continuous Drain Id25 C | 100A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |