SQD19P06-60L_GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SQD19P06-60L_GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 60V 20A TO252 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Vgs Max | ±20V |
| F E T Type | P-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | SQD19P06-60L_GE3CT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2.5V @ 250µA |
| Package Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 55 mOhm @ 19A, 10V |
| Gate Charge Qg Max Vgs | 41nC @ 10V |
| Detailed Description | P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount |
| Power Dissipation Max | 46W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Drainto Source Voltage Vdss | 60V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1490pF @ 25V |
| Current Continuous Drain Id25 C | 20A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |