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Manufacturer Image
SISS67DN-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SISS67DN-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CHAN 30V POWERPAK 1212-
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET® Gen III
Vgs Max ±25V
F E T Type P-Channel
Packaging Cut Tape (CT)
Other Names SISS67DN-T1-GE3CT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.5V @ 250µA
Package Case PowerPAK® 1212-8S
Mounting Type Surface Mount
Rds On Max Id Vgs 5.5 mOhm @ 15A, 10V
Gate Charge Qg Max Vgs 111nC @ 10V
Detailed Description 353693
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package PowerPAK® 1212-8S
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 4380pF @ 15V
Current Continuous Drain Id25 C 60A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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