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SISA18ADN-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SISA18ADN-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 30V 38.3A 1212-8
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Vgs Max +20V, -16V
F E T Type N-Channel
Packaging Original-Reel®
Other Names SISA18ADN-T1-GE3DKR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.4V @ 250µA
Package Case PowerPAK® 1212-8
Mounting Type Surface Mount
Rds On Max Id Vgs 7.5 mOhm @ 10A, 10V
Gate Charge Qg Max Vgs 21.5nC @ 10V
Detailed Description 330093
Power Dissipation Max 3.2W (Ta), 19.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package PowerPAK® 1212-8
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1000pF @ 15V
Current Continuous Drain Id25 C 38.3A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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