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Product Image
SIS862DN-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIS862DN-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 60V 40A 1212
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Vgs Max ±20V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names SIS862DN-T1-GE3TR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.6V @ 250µA
Package Case PowerPAK® 1212-8
Mounting Type Surface Mount
Rds On Max Id Vgs 8.5 mOhm @ 20A, 10V
Gate Charge Qg Max Vgs 32nC @ 10V
Detailed Description 347487
Power Dissipation Max 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package PowerPAK® 1212-8
Drainto Source Voltage Vdss 60V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1320pF @ 30V
Current Continuous Drain Id25 C 40A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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