SIS110DN-T1-GE3
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SIS110DN-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CHAN 100V POWERPAK 1212 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® Gen IV |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Original-Reel® |
| Other Names | SIS110DN-T1-GE3DKR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 54 mOhm @ 4A, 10V |
| Gate Charge Qg Max Vgs | 13nC @ 10V |
| Detailed Description | N-Channel 100V 5.2A (Ta), 14.2A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drainto Source Voltage Vdss | 100V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 550pF @ 50V |
| Current Continuous Drain Id25 C | 5.2A (Ta), 14.2A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 7.5V, 10V |