SIRA62DP-T1-RE3
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SIRA62DP-T1-RE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CHAN 30V |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® Gen IV |
| Vgs Max | +16V, -12V |
| F E T Type | N-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | SIRA62DP-T1-RE3CT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2.2V @ 250µA |
| Package Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 1.2 mOhm @ 15A, 10V |
| Gate Charge Qg Max Vgs | 93nC @ 10V |
| Detailed Description | N-Channel 30V 51.4A (Ta), 80A (Tc) 5.2W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | PowerPAK® SO-8 |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 4460pF @ 15V |
| Current Continuous Drain Id25 C | 51.4A (Ta), 80A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |