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SIRA60DP-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIRA60DP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 30V 100A POWERPAKSO
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET® Gen IV
Vgs Max +20V, -16V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names SIRA60DP-T1-GE3CT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.2V @ 250µA
Package Case PowerPAK® SO-8
Mounting Type Surface Mount
Rds On Max Id Vgs 0.94 mOhm @ 20A, 10V
Gate Charge Qg Max Vgs 60nC @ 4.5V
Detailed Description 350106
Power Dissipation Max 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package PowerPAK® SO-8
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 7650pF @ 15V
Current Continuous Drain Id25 C 100A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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