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Product Image
SIR616DP-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIR616DP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 200V 20.2A SO-8
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series ThunderFET®
Vgs Max ±20V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names SIR616DP-T1-GE3TR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case PowerPAK® SO-8
Mounting Type Surface Mount
Rds On Max Id Vgs 50.5 mOhm @ 10A, 10V
Gate Charge Qg Max Vgs 28nC @ 7.5V
Detailed Description 345500
Power Dissipation Max 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package PowerPAK® SO-8
Drainto Source Voltage Vdss 200V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1450pF @ 100V
Current Continuous Drain Id25 C 20.2A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 7.5V, 10V

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