• info@zenkaeurope.com
  • English
    English
    Deutsch
    Français
    Español
    Italiano
    中文
    हिन्दी
    Lietuviškai
Product Image
SIR412DP-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIR412DP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 25V 20A PPAK SO-8
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Vgs Max ±20V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names SIR412DP-T1-GE3TR SIR412DPT1GE3
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.5V @ 250µA
Package Case PowerPAK® SO-8
Mounting Type Surface Mount
Rds On Max Id Vgs 12 mOhm @ 10A, 10V
Gate Charge Qg Max Vgs 16nC @ 10V
Detailed Description 341066
Power Dissipation Max 3.9W (Ta), 15.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package PowerPAK® SO-8
Drainto Source Voltage Vdss 25V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 600pF @ 10V
Current Continuous Drain Id25 C 20A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

REQUEST A QUOTE


Contact Us

We're here round-the-clock for inquiries, partnership opportunities, or any assistance you need.

Contact Us