SIHU5N50D-E3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SIHU5N50D-E3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 500V 5.3A TO251 IPAK |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Other Names | SIHU5N50D-E3CT SIHU5N50D-E3CT-ND SIHU5N50DE3 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 5V @ 250µA |
| Package Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 1.5 Ohm @ 2.5A, 10V |
| Gate Charge Qg Max Vgs | 20nC @ 10V |
| Detailed Description | N-Channel 500V 5.3A (Tc) 104W (Tc) Through Hole TO-251AA |
| Power Dissipation Max | 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-251AA |
| Drainto Source Voltage Vdss | 500V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 325pF @ 100V |
| Current Continuous Drain Id25 C | 5.3A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |