• info@zenkaeurope.com
  • English
    English
    Deutsch
    Français
    Español
    Italiano
    中文
    हिन्दी
    Lietuviškai
Manufacturer Image
SIHU4N80E-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIHU4N80E-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 800V TO-251
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series E
Vgs Max ±30V
F E T Type N-Channel
Packaging Tube
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type Through Hole
Rds On Max Id Vgs 1.27 Ohm @ 2A, 10V
Gate Charge Qg Max Vgs 32nC @ 10V
Detailed Description 351173
Power Dissipation Max 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package IPAK (TO-251)
Drainto Source Voltage Vdss 800V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 622pF @ 100V
Current Continuous Drain Id25 C 4.3A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

REQUEST A QUOTE


Contact Us

We're here round-the-clock for inquiries, partnership opportunities, or any assistance you need.

Contact Us