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SIHP11N80E-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIHP11N80E-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 800V 12A TO220AB
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series E
Vgs Max ±30V
F E T Type N-Channel
Packaging Tube
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case TO-220-3
Mounting Type Through Hole
Rds On Max Id Vgs 440 mOhm @ 5.5A, 10V
Gate Charge Qg Max Vgs 88nC @ 10V
Detailed Description 349710
Power Dissipation Max 179W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-220AB
Drainto Source Voltage Vdss 800V
Input Capacitance Ciss Max Vds 1670pF @ 100V
Current Continuous Drain Id25 C 12A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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