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SIHG33N65E-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIHG33N65E-GE3
Manufacturer 4D Systems
Description MOSFET N-CH 650V 32.4A TO-247AC
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max 10V
I G B T Type ±30V
F E T Feature N-Channel
Other Names SIHG33N65E-GE3DKR
Ro H S Status Digi-Reel®
Technology MOSFET (Metal Oxide)
Vgsth Max Id 105 mOhm @ 16.5A, 10V
Voltage Test 4040pF @ 100V
Mounting Type Through Hole
Polarization TO-247-3
Rds On Max Id Vgs 32.4A (Tc)
Capacitance Ratio 313W (Tc)
Voltage Breakdown TO-247AC
Gate Charge Qg Max Vgs 4V @ 250µA
Expanded Description N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC
Operating Temperature -55°C ~ 150°C (TJ)
Manufacturer Part Number SIHG33N65E-GE3
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 173nC @ 10V
Current Continuous Drain Id25 C 650V
Moisture Sensitivity Level M S L 1 (Unlimited)

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