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SIHD6N65E-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIHD6N65E-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 650V 7A TO252
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±30V
F E T Type N-Channel
Packaging Tube
Other Names SIHD6N65E-GE3CT SIHD6N65E-GE3CT-ND
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Rds On Max Id Vgs 600 mOhm @ 3A, 10V
Gate Charge Qg Max Vgs 48nC @ 10V
Detailed Description 340337
Power Dissipation Max 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package D-PAK (TO-252AA)
Drainto Source Voltage Vdss 650V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 820pF @ 100V
Current Continuous Drain Id25 C 7A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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