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Product Image
SIHD6N62ET1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIHD6N62ET1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 620V 6A TO252AA
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series E
Vgs Max ±30V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names SIHD6N62ET1-GE3CT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Rds On Max Id Vgs 900 mOhm @ 3A, 10V
Gate Charge Qg Max Vgs 34nC @ 10V
Detailed Description 349596
Power Dissipation Max 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-252AA
Drainto Source Voltage Vdss 620V
Input Capacitance Ciss Max Vds 578pF @ 100V
Current Continuous Drain Id25 C 6A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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