SIHB24N65ET5-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SIHB24N65ET5-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 650V 24A TO263 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | E |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 145 mOhm @ 12A, 10V |
| Gate Charge Qg Max Vgs | 122nC @ 10V |
| Detailed Description | N-Channel 650V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak) |
| Power Dissipation Max | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-263 (D²Pak) |
| Drainto Source Voltage Vdss | 650V |
| Input Capacitance Ciss Max Vds | 2740pF @ 100V |
| Current Continuous Drain Id25 C | 24A (Tc) |
| Drive Voltage Max Rds On Min Rds On | 10V |