SIHB22N60E-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SIHB22N60E-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 600V 21A D2PAK |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Other Names | SIHB22N60EGE3 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 180 mOhm @ 11A, 10V |
| Gate Charge Qg Max Vgs | 86nC @ 10V |
| Detailed Description | N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount D2PAK |
| Power Dissipation Max | 227W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | D2PAK |
| Drainto Source Voltage Vdss | 600V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1920pF @ 100V |
| Current Continuous Drain Id25 C | 21A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |