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Product Image
SIE836DF-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIE836DF-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 200V 18.3A POLARPAK
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Vgs Max ±30V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names SIE836DF-T1-GE3TR SIE836DFT1GE3
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4.5V @ 250µA
Package Case 10-PolarPAK® (SH)
Mounting Type Surface Mount
Rds On Max Id Vgs 130 mOhm @ 4.1A, 10V
Gate Charge Qg Max Vgs 41nC @ 10V
Detailed Description 323602
Power Dissipation Max 5.2W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 10-PolarPAK® (SH)
Drainto Source Voltage Vdss 200V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1200pF @ 100V
Current Continuous Drain Id25 C 18.3A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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