SIE836DF-T1-GE3
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SIE836DF-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 200V 18.3A POLARPAK |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | SIE836DF-T1-GE3TR SIE836DFT1GE3 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4.5V @ 250µA |
| Package Case | 10-PolarPAK® (SH) |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 130 mOhm @ 4.1A, 10V |
| Gate Charge Qg Max Vgs | 41nC @ 10V |
| Detailed Description | N-Channel 200V 18.3A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (SH) |
| Power Dissipation Max | 5.2W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 10-PolarPAK® (SH) |
| Drainto Source Voltage Vdss | 200V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1200pF @ 100V |
| Current Continuous Drain Id25 C | 18.3A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |