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SIE820DF-T1-E3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIE820DF-T1-E3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 20V 50A 10-POLARPAK
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Vgs Max ±12V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names SIE820DF-T1-E3CT SIE820DFT1E3
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2V @ 250µA
Package Case 10-PolarPAK® (S)
Mounting Type Surface Mount
Rds On Max Id Vgs 3.5 mOhm @ 18A, 4.5V
Gate Charge Qg Max Vgs 143nC @ 10V
Detailed Description 327366
Power Dissipation Max 5.2W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 10-PolarPAK® (S)
Drainto Source Voltage Vdss 20V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 4300pF @ 10V
Current Continuous Drain Id25 C 50A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 2.5V, 4.5V

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