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SIE810DF-T1-E3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIE810DF-T1-E3
Manufacturer 4D Systems
Description MOSFET N-CH 20V 60A 10-POLARPAK
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
F E T Feature N-Channel
Other Names SIE810DF-T1-E3TR SIE810DFT1E3
Ro H S Status Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
Vgsth Max Id 1.4 mOhm @ 25A, 10V
Voltage Test 13000pF @ 10V
Mounting Type Surface Mount
Polarization 10-PolarPAK® (L)
Rds On Max Id Vgs 60A (Tc)
Capacitance Ratio 5.2W (Ta), 125W (Tc)
Voltage Breakdown 10-PolarPAK® (L)
Gate Charge Qg Max Vgs 2V @ 250µA
Expanded Description N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Operating Temperature -55°C ~ 150°C (TJ)
Manufacturer Part Number SIE810DF-T1-E3
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 300nC @ 10V
Current Continuous Drain Id25 C 20V
Moisture Sensitivity Level M S L 1 (Unlimited)

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