SIA850DJ-T1-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SIA850DJ-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 190V 0.95A SC70-6 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | LITTLE FOOT® |
| Vgs Max | ±16V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| F E T Feature | Schottky Diode (Isolated) |
| Other Names | SIA850DJ-T1-GE3-ND SIA850DJ-T1-GE3TR SIA850DJT1GE3 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1.4V @ 250µA |
| Package Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 3.8 Ohm @ 360mA, 4.5V |
| Gate Charge Qg Max Vgs | 4.5nC @ 10V |
| Detailed Description | N-Channel 190V 950mA (Tc) 1.9W (Ta), 7W (Tc) Surface Mount PowerPAK® SC-70-6 Dual |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
| Drainto Source Voltage Vdss | 190V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 90pF @ 100V |
| Current Continuous Drain Id25 C | 950mA (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 1.8V, 4.5V |