SIA411DJ-T1-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SIA411DJ-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 20V 12A SC70-6 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | ±8V |
| F E T Type | P-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | SIA411DJ-T1-GE3TR SIA411DJT1GE3 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1V @ 250µA |
| Package Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 30 mOhm @ 5.9A, 4.5V |
| Gate Charge Qg Max Vgs | 38nC @ 8V |
| Detailed Description | P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single |
| Power Dissipation Max | 3.5W (Ta), 19W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | PowerPAK® SC-70-6 Single |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1200pF @ 10V |
| Current Continuous Drain Id25 C | 12A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 1.5V, 4.5V |