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Product Image
SIA110DJ-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIA110DJ-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 100V POWERPAK SC-7
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET® Gen IV
Vgs Max ±20V
F E T Type N-Channel
Packaging Original-Reel®
Other Names SIA110DJ-T1-GE3DKR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case PowerPAK® SC-70-6
Mounting Type Surface Mount
Rds On Max Id Vgs 55 mOhm @ 4A, 10V
Gate Charge Qg Max Vgs 13nC @ 10V
Detailed Description 347498
Power Dissipation Max 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package PowerPAK® SC-70-6 Single
Drainto Source Voltage Vdss 100V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 550pF @ 50V
Current Continuous Drain Id25 C 5.4A (Ta), 12A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 7.5V, 10V

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