SI8469DB-T2-E1
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI8469DB-T2-E1 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 8V 3.6A MICRO |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | ±5V |
| F E T Type | P-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | SI8469DB-T2-E1CT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 800mV @ 250µA |
| Package Case | 4-UFBGA |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 64 mOhm @ 1.5A, 4.5V |
| Gate Charge Qg Max Vgs | 17nC @ 4.5V |
| Detailed Description | P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount |
| Power Dissipation Max | 780mW (Ta), 1.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drainto Source Voltage Vdss | 8V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 900pF @ 4V |
| Current Continuous Drain Id25 C | 4.6A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V |