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Product Image
SI8469DB-T2-E1

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI8469DB-T2-E1
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 8V 3.6A MICRO
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Vgs Max ±5V
F E T Type P-Channel
Packaging Cut Tape (CT)
Other Names SI8469DB-T2-E1CT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 800mV @ 250µA
Package Case 4-UFBGA
Mounting Type Surface Mount
Rds On Max Id Vgs 64 mOhm @ 1.5A, 4.5V
Gate Charge Qg Max Vgs 17nC @ 4.5V
Detailed Description P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount
Power Dissipation Max 780mW (Ta), 1.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drainto Source Voltage Vdss 8V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 900pF @ 4V
Current Continuous Drain Id25 C 4.6A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V

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