SI8435DB-T1-E1
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI8435DB-T1-E1 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 20V 10A 2X2 4-MFP |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | ±5V |
| F E T Type | P-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | SI8435DB-T1-E1TR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1V @ 250µA |
| Package Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 41 mOhm @ 1A, 4.5V |
| Gate Charge Qg Max Vgs | 35nC @ 5V |
| Detailed Description | P-Channel 20V 10A (Tc) 2.78W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot |
| Power Dissipation Max | 2.78W (Ta), 6.25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 4-Microfoot |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1600pF @ 10V |
| Current Continuous Drain Id25 C | 10A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 1.5V, 4.5V |