SI8429DB-T1-E1
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI8429DB-T1-E1 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 8V 11.7A 2X2 4-MFP |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | ±5V |
| F E T Type | P-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | SI8429DB-T1-E1TR SI8429DBT1E1 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 800mV @ 250µA |
| Package Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 35 mOhm @ 1A, 4.5V |
| Gate Charge Qg Max Vgs | 26nC @ 5V |
| Detailed Description | P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 4-Microfoot |
| Drainto Source Voltage Vdss | 8V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1640pF @ 4V |
| Current Continuous Drain Id25 C | 11.7A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 1.2V, 4.5V |