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SI8416DB-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI8416DB-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 8V 16A MICRO
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Vgs Max ±5V
F E T Type N-Channel
Packaging Original-Reel®
Other Names SI8416DB-T1-GE3DKR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 800mV @ 250µA
Package Case 6-UFBGA
Mounting Type Surface Mount
Rds On Max Id Vgs 23 mOhm @ 1.5A, 4.5V
Gate Charge Qg Max Vgs 26nC @ 4.5V
Detailed Description 348030
Power Dissipation Max 2.77W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 6-microfoot
Drainto Source Voltage Vdss 8V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1470pF @ 4V
Current Continuous Drain Id25 C 16A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 1.2V, 4.5V

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