• info@zenkaeurope.com
  • English
    English
    Deutsch
    Français
    Español
    Italiano
    中文
    हिन्दी
    Lietuviškai
Product Image
SI7190DP-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI7190DP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 250V 18.4A PPAK SO-8
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Vgs Max ±20V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names SI7190DP-T1-GE3CT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case PowerPAK® SO-8
Mounting Type Surface Mount
Rds On Max Id Vgs 118 mOhm @ 4.4A, 10V
Gate Charge Qg Max Vgs 72nC @ 10V
Detailed Description 347654
Power Dissipation Max 5.4W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package PowerPAK® SO-8
Drainto Source Voltage Vdss 250V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 2214pF @ 125V
Current Continuous Drain Id25 C 18.4A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 6V, 10V

REQUEST A QUOTE


Contact Us

We're here round-the-clock for inquiries, partnership opportunities, or any assistance you need.

Contact Us