SI7119DN-T1-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI7119DN-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 200V 3.8A 1212-8 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | ±20V |
| F E T Type | P-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | SI7119DN-T1-GE3TR SI7119DNT1GE3 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 1.05 Ohm @ 1A, 10V |
| Gate Charge Qg Max Vgs | 25nC @ 10V |
| Detailed Description | P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8 |
| Power Dissipation Max | 3.7W (Ta), 52W (Tc) |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drainto Source Voltage Vdss | 200V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 666pF @ 50V |
| Current Continuous Drain Id25 C | 3.8A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 6V, 10V |