SI7106DN-T1-GE3
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI7106DN-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 20V 12.5A 1212-8 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | ±12V |
| F E T Type | N-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | SI7106DN-T1-GE3CT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1.5V @ 250µA |
| Package Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 6.2 mOhm @ 19.5A, 4.5V |
| Gate Charge Qg Max Vgs | 27nC @ 4.5V |
| Detailed Description | N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8 |
| Power Dissipation Max | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Continuous Drain Id25 C | 12.5A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 2.5V, 4.5V |