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Product Image
SI5475BDC-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI5475BDC-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 12V 6A 1206-8
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Vgs Max ±8V
F E T Type P-Channel
Packaging Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
Vgsth Max Id 1V @ 250µA
Package Case 8-SMD, Flat Lead
Mounting Type Surface Mount
Rds On Max Id Vgs 28 mOhm @ 5.6A, 4.5V
Gate Charge Qg Max Vgs 40nC @ 8V
Detailed Description 334424
Power Dissipation Max 2.5W (Ta), 6.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 1206-8 ChipFET™
Drainto Source Voltage Vdss 12V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1400pF @ 6V
Current Continuous Drain Id25 C 6A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 1.8V, 4.5V

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