SI5435BDC-T1-GE3
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI5435BDC-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 30V 4.3A 1206-8 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | ±20V |
| F E T Type | P-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | SI5435BDC-T1-GE3CT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 3V @ 250µA |
| Package Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 45 mOhm @ 4.3A, 10V |
| Gate Charge Qg Max Vgs | 24nC @ 10V |
| Detailed Description | P-Channel 30V 4.3A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™ |
| Power Dissipation Max | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Continuous Drain Id25 C | 4.3A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |