SI5406DC-T1-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI5406DC-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 12V 6.9A 1206-8 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | ±8V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 600mV @ 1.2mA (Min) |
| Package Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 20 mOhm @ 6.9A, 4.5V |
| Gate Charge Qg Max Vgs | 20nC @ 4.5V |
| Detailed Description | N-Channel 12V 6.9A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™ |
| Power Dissipation Max | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drainto Source Voltage Vdss | 12V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Continuous Drain Id25 C | 6.9A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 2.5V, 4.5V |