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SI4463CDY-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI4463CDY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CHAN 2.5V SO8
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Vgs Max ±12V
F E T Type P-Channel
Packaging Cut Tape (CT)
Other Names SI4463CDY-T1-GE3CT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 1.4V @ 250µA
Package Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Rds On Max Id Vgs 8 mOhm @ 13A, 10V
Gate Charge Qg Max Vgs 162nC @ 10V
Detailed Description 341329
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 8-SO
Drainto Source Voltage Vdss 20V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 4250pF @ 15V
Current Continuous Drain Id25 C 13.6A (Ta), 49A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 2.5V, 10V

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