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Manufacturer Image
SI4446DY-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI4446DY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 40V 3.9A 8-SOIC
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Vgs Max ±12V
F E T Type N-Channel
Packaging Original-Reel®
Other Names SI4446DY-T1-GE3DKR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 1.6V @ 250µA
Package Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Rds On Max Id Vgs 40 mOhm @ 5.2A, 10V
Gate Charge Qg Max Vgs 12nC @ 4.5V
Detailed Description 336523
Power Dissipation Max 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 8-SO
Drainto Source Voltage Vdss 40V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 700pF @ 20V
Current Continuous Drain Id25 C 3.9A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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