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Manufacturer Image
SI4190DY-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI4190DY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 100V 20A 8-SOIC
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Vgs Max ±20V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names SI4190DY-T1-GE3CT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.8V @ 250µA
Package Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Rds On Max Id Vgs 8.8 mOhm @ 15A, 10V
Gate Charge Qg Max Vgs 58nC @ 10V
Detailed Description 347400
Power Dissipation Max 3.5W (Ta), 7.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 8-SO
Drainto Source Voltage Vdss 100V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 2000pF @ 50V
Current Continuous Drain Id25 C 20A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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