SI3475DV-T1-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI3475DV-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 200V 0.95A 6-TSOP |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | ±20V |
| F E T Type | P-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | SI3475DV-T1-GE3CT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 1.61 Ohm @ 900mA, 10V |
| Gate Charge Qg Max Vgs | 18nC @ 10V |
| Detailed Description | P-Channel 200V 950mA (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 6-TSOP |
| Drainto Source Voltage Vdss | 200V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 500pF @ 50V |
| Current Continuous Drain Id25 C | 950mA (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 6V, 10V |