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SI3475DV-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI3475DV-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 200V 0.95A 6-TSOP
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Vgs Max ±20V
F E T Type P-Channel
Packaging Cut Tape (CT)
Other Names SI3475DV-T1-GE3CT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case SOT-23-6 Thin, TSOT-23-6
Mounting Type Surface Mount
Rds On Max Id Vgs 1.61 Ohm @ 900mA, 10V
Gate Charge Qg Max Vgs 18nC @ 10V
Detailed Description 332471
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 6-TSOP
Drainto Source Voltage Vdss 200V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 500pF @ 50V
Current Continuous Drain Id25 C 950mA (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 6V, 10V

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