SI3460BDV-T1-GE3
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI3460BDV-T1-GE3 |
| Manufacturer | 4D Systems |
| Description | MOSFET N-CH 20V 8A 6-TSOP |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| F E T Feature | N-Channel |
| Ro H S Status | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 27 mOhm @ 5.1A, 4.5V |
| Voltage Test | 860pF @ 10V |
| Mounting Type | Surface Mount |
| Polarization | SOT-23-6 Thin, TSOT-23-6 |
| Rds On Max Id Vgs | 8A (Tc) |
| Capacitance Ratio | 2W (Ta), 3.5W (Tc) |
| Voltage Breakdown | 6-TSOP |
| Gate Charge Qg Max Vgs | 1V @ 250µA |
| Expanded Description | N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Manufacturer Part Number | SI3460BDV-T1-GE3 |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 24nC @ 8V |
| Current Continuous Drain Id25 C | 20V |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |