SI2369DS-T1-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI2369DS-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 30V 7.6A TO-236 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | ±20V |
| F E T Type | P-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | SI2369DS-T1-GE3TR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2.5V @ 250µA |
| Package Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 29 mOhm @ 5.4A, 10V |
| Gate Charge Qg Max Vgs | 36nC @ 10V |
| Detailed Description | P-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-236 |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1295pF @ 15V |
| Current Continuous Drain Id25 C | 7.6A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |