SI2342DS-T1-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI2342DS-T1-GE3 |
| Manufacturer | 4D Systems |
| Description | MOSFET N-CH 8V 6A SOT-23 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | 1.2V, 4.5V |
| I G B T Type | ±5V |
| F E T Feature | N-Channel |
| Other Names | SI2342DS-T1-GE3-ND SI2342DS-T1-GE3TR |
| Ro H S Status | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 17 mOhm @ 7.2A, 4.5V |
| Voltage Test | 1070pF @ 4V |
| Mounting Type | Surface Mount |
| Polarization | TO-236-3, SC-59, SOT-23-3 |
| Rds On Max Id Vgs | 6A (Tc) |
| Capacitance Ratio | 1.3W (Ta), 2.5W (Tc) |
| Voltage Breakdown | SOT-23 |
| Gate Charge Qg Max Vgs | 800mV @ 250µA |
| Expanded Description | N-Channel 8V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Manufacturer Part Number | SI2342DS-T1-GE3 |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 15.8nC @ 4.5V |
| Current Continuous Drain Id25 C | 8V |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |