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SI2308CDS-T1-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SI2308CDS-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 60V 2.6A SOT23-3
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series TrenchFET® Gen IV
Vgs Max ±20V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names SI2308CDS-T1-GE3TR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 3V @ 250µA
Package Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Rds On Max Id Vgs 144 mOhm @ 1.9A, 10V
Gate Charge Qg Max Vgs 4nC @ 10V
Detailed Description 349331
Power Dissipation Max 1.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package SOT-23-3 (TO-236)
Drainto Source Voltage Vdss 60V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 105pF @ 30V
Current Continuous Drain Id25 C 2.6A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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