SI2301BDS-T1-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI2301BDS-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 20V 2.2A SOT23-3 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | ±8V |
| F E T Type | P-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | SI2301BDS-T1-GE3CT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 950mV @ 250µA |
| Package Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 100 mOhm @ 2.8A, 4.5V |
| Gate Charge Qg Max Vgs | 10nC @ 4.5V |
| Detailed Description | P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236) |
| Power Dissipation Max | 700mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 375pF @ 6V |
| Current Continuous Drain Id25 C | 2.2A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 2.5V, 4.5V |