SI1070X-T1-GE3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SI1070X-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 30V 1.2A SOT563F |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Vgs Max | ±12V |
| F E T Type | N-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | SI1070X-T1-GE3CT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1.55V @ 250µA |
| Package Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 99 mOhm @ 1.2A, 4.5V |
| Gate Charge Qg Max Vgs | 8.3nC @ 5V |
| Detailed Description | N-Channel 30V 236mW (Ta) Surface Mount SC-89-6 |
| Power Dissipation Max | 236mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | SC-89-6 |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 385pF @ 15V |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 2.5V, 4.5V |